| PART |
Description |
Maker |
| 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
| MMBD4448HSDW-TP MMBD4448HAQW-TP |
DIODE SWITCHING 80V 250MA SOT363 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
200mW Switching Diodes
|
Micro Commercial Components, Corp.
|
| 150KR60 150KSR10 150KSR40 150KSR30 150KR20 150KR30 |
Diode Switching 600V 150A 2-Pin DO-8
Diode Switching 100V 150A 2-Pin Case B-42
Diode Switching 400V 150A 2-Pin Case B-42
Diode Switching 300V 150A 2-Pin Case B-42
Diode Switching 200V 150A 2-Pin DO-8
Diode Switching 300V 150A 2-Pin DO-8
|
New Jersey Semiconductor
|
| MMBD7000LT1 |
Dual Switching Diode
200mA Surface Mount Switching Diode-100V
|
WILLAS ELECTRONIC CORP
|
| 1N445 1N316 1N440 1N547 1N535 1N539 1N536 1N533 1N |
GOLD BONDED GERMANIUM DIODES
Diode Zener Single 8.4V 5% 500mW 2-Pin DO-7
Diode Zener Single 68V 5% 1.5W 2-Pin DO-41
Diode Switching 400V 3A 2-Pin SOD-64 Ammo
Diode Zener Single 87V 5W 2-Pin DO-201AE
Diode Switching 75V 0.25A Automotive 2-Pin SOD-323 T/R
|
New Jersey Semiconductor
|
| BAS116LT1D BAS116LT3G BAS116LT1G |
Switching Diode
Switching Diod 0.2 A, 75 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| CMKD2836 CMKD2838 |
SMD Switching Diode Dual Pair: Common Cathode
SMD Switching Diode Dual Pair: Common Anode
SURFACE MOUNT ULTRAmini DUAL PAIR HIGH SPEED SWITCHING SILICON DIODES
|
Central Semiconductor Corp
|
| Q67040S4717 IKW30N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
